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| Two-chip MicroCapacitance (MC) SIDACtor(R) Device RoHS 1 (T) 3 (R) 2 (G) This two-chip MicroCapacitance SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options are available. SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters Part Number * P0302AAMCL P0602AAMCL VDRM Volts 6 25 VDRM Volts 25 58 65 90 120 140 170 190 220 275 VS Volts 25 40 VS Volts 40 77 95 130 160 180 220 250 300 350 VDRM Volts 12 50 VDRM Volts 50 116 130 180 240 280 340 380 440 550 VS Volts 50 80 VS Volts 80 154 190 260 320 360 440 500 600 700 VT Volts 4 4 IDRM Amps 5 5 IS mAmps 800 800 IT Amps 2.2 2.2 IH mAmps 50 50 Pins 1-2, 3-2 Pins 1-3 Part Number * P0602ACMCL P1402ACMCL P1602ACMCL P2202ACMCL P2702ACMCL P3002ACMCL P3602ACMCL P4202ACMCL P4802ACMCL P6002ACMCL Pins 1-2, 3-2 Pins 1-3 VT Volts 4 4 4 4 4 4 4 4 4 4 IDRM Amps 5 5 5 5 5 5 5 5 5 5 IS mAmps 800 800 800 800 800 800 800 800 800 800 IT Amps 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 IH mAmps 50 150 150 150 150 150 150 150 150 150 * "L" in part number indicates RoHS compliance. For non-RoHS compliant device, delete "L" from part number. For surge ratings, see table below. General Notes: * All measurements are made at an ambient temperature of 25 C. IPP applies to -40 C through +85 C temperature range. * IPP is a repetitive surge rating and is guaranteed for the life of the product. * Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. * VDRM is measured at IDRM. * VS is measured at 100 V/s. * Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. Surge Ratings in Amps IPP Series 0.2x310 * 2x10 * 8x20 * 0.5x700 ** 2x10 ** 1.2x50 ** Amps A 20 Amps 150 Amps 150 400 10x160 * 10x160 ** Amps 90 200 10x560 * 10x560 ** Amps 50 150 5x320 * 9x720 ** Amps 75 200 10x360 * 10x1000 * 5x310 * ITSM 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz Amps 75 175 Amps 45 100 Amps 75 200 Amps 20 50 di/dt Amps/s 500 500 C 50 500 * Current waveform in s ** Voltage waveform in s www.littelfuse.com 3 - 48 (c) 2006 Littelfuse * Telecom Design Guide Two-chip MicroCapacitance (MC) SIDACtor(R) Device Thermal Considerations Package Modified TO-220 Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +150 -65 to +150 50 Unit C C C/W PIN 1 PIN 2 PIN 3 Capacitance Values pF Pin 1-2 / 3-2 Tip-Ground, Ring-Ground Part Number P0302AAMCL P0602AAMCL P0602ACMCL P1402ACMCL P1602ACMCL P2202ACMCL P2702ACMCL P3002ACMCL P3602ACMCL P4202ACMCL P4802ACMCL P6002ACMCL MIN 25 15 25 40 35 45 40 35 35 30 30 30 MAX 55 35 45 60 55 70 60 55 50 50 45 45 MIN 15 10 10 20 20 25 20 20 15 15 15 15 pF Pin 1-3 Tip-Ring MAX 35 20 25 35 35 40 35 35 30 30 30 25 Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias. Telecom Design Guide * (c) 2006 Littelfuse 3 - 49 www.littelfuse.com SIDACtor Devices Two-chip MicroCapacitance (MC) SIDACtor(R) Device +I IPP - Peak Pulse Current - %IPP tr = rise time to peak value td = decay time to half value IT IS IH IDRM -V VT VDRM VS +V 100 Peak Value Waveform = tr x td 50 Half Value 0 0 tr td t - Time (s) -I V-I Characteristics tr x td Pulse Waveform Percent of VS Change - % 10 IH (TC = 25 C) 14 12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160 IH 25 C 25 C Ratio of Case Temperature (TC) - C Junction Temperature (TJ) - C Normalized VS Change versus Junction Temperature Normalized DC Holding Current versus Case Temperature www.littelfuse.com 3 - 50 (c) 2006 Littelfuse * Telecom Design Guide |
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